A Percolative Model of Soft Breakdown in Ultrathin Oxides
نویسندگان
چکیده
The degradation of ultrathin oxide layers in the presence of a stress voltage is modeled in terms of two antagonist percolation processes taking place in a random resistor network. The resistance and leakage current fluctuations are studied by Monte Carlo simulations for voltages below the breakdown threshold. An increase of excess noise together with a noticeable non-Gaussian behavior is found in the pre-breakdown regime in agreement with experimental results.
منابع مشابه
Enhancement in soft breakdown occurrence of ultra-thin gate oxides caused by photon eect in rapid thermal post-oxidation annealing
Soft breakdown properties aected by photon energy during rapid thermal post-oxidation annealing (POA) of ultrathin gate oxide are investigated. Generally, breakdown can be classi®ed into normal hard breakdown (HBD) and soft breakdown (SBD). It was found that the occurrence of HBD and SBD depends on the process and stress ®eld. Samples with front and back sides illuminated by a tungsten±halogen...
متن کاملA trap generation closed-form statistical model for intrinsic oxide breakdown - Electron Devices, IEEE Transactions on
A trap generation statistical model with the trap sphere radius as parameter has been newly formulated in closed-form for intrinsic breakdown of ultrathin oxides and, by incorporating the trap filling fraction as the secondary parameter, can be practically useful in a manufacturing process. Experimental reproduction for different oxide thicknesses and areas has been achieved through the model. ...
متن کاملUltrathin Oxide on Polysilicon by ECR(Electron Cyclotron Resonance) N2O Plasma
We have developed a process of growing ultrathin oxide on polysilicon layer by using Electron Cyclotron Resonance (ECR) N2O plasma. Sub-4 nm thick polyoxide on n+ and p+ polysilicon layer were grown and characterized. The oxides have relatively large breakdown voltage, small electron trapping and QBD up to 7 C/ for polyoxide on p+ cm2 polysilicon and up to 5 C/ for polyoxide on n+ polysilicon u...
متن کامل